Gallium nitride LED technology is used in the United States to greatly improve the luminous flux

- Feb 06, 2018-

Japanese scientists at the North Carolina State University before developed a new technology, can not increase the brightness of the electricity consumption of the situation significantly enhance the LED. At the same time, with the help of a special coating material, this new LED is more stable and more adaptable than the ordinary LED product. The related papers are published online in the famous international chemical journal, Langmuir (Langmuir).

The first author and Dr. Stuart Wilkins of North Carolina State University said they achieved this goal by coating a self assembling phosphate coating on polar GaN semiconductor.

The researchers first made gallium nitride with nitrogen and gallium by multi-layer self-assembly. The phosphoric acid group containing organophosphorus molecules was then added to the surface of the gallium nitride material. The use of GaN semiconductor improves the luminous efficiency of LED. The phosphates ensure the stability of Gan, which makes it difficult to react with the substances in the environment and reduce the possibility of its dissolution in the solution.

"It is very important to improve the stability of gallium nitride." "Because this can create conditions for the future of new technology in the field of biomedicine," Wilkins said. For example, implantable sensors. "

Compared with the common silicon semiconductor LED in the market, gallium nitride semiconductors can increase the output of light. With the same power consumption, the luminous flux of silicon semiconductor LED can reach 1000 lumens, and the luminous flux of gallium nitride semiconductor LED will reach more than 2000 lumens. Therefore, LED based on gallium nitride is more efficient and energy efficient. In addition, compared with silicon semiconductor LED, gallium nitride semiconductor LED is small in volume and light in weight, and is easier to achieve integration.